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BLF881; BLF881S
UHF power LDMOS transistor
Rev. 02 -- 10 February 2010 Product data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. Mode of operation 2-tone, class AB DVB-T (8k OFDM)
[1]
f (MHz) f1 = 860; f2 = 860.1 858
PL -
PL(PEP) 140 -
PL(AV) Gp (W) 33 21 21
D 49 34
IMD3 -34 -
IMDshldr (dBc) -33[1]
(W) (W)
(dB) (%) (dBc)
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = -34 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = -33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gain
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
Communication transmitter applications in the UHF band Industrial applications in the UHF band
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF881 (SOT467C)
1 3 2 2 3
sym112
1
BLF881S (SOT467B) 1 2 3 drain gate source
[1]
1 3 2
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Name Description BLF881 BLF881S earless LDMOST ceramic package; 2 leads Version SOT467B Type number Package flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
BLF881_BLF881S_2
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Product data sheet
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NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min -0.5 -65 Max 104 +13 +150 200 Unit V V C C
5. Thermal characteristics
Table 5. Symbol Rth(j-c)
[1]
Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL(AV) = 70 W
[1]
Typ 0.95
Unit K/W
Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS VGS(th) IDSS IDSX IGSS RDS(on) Ciss Coss Crss
[1]
Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance
Conditions VGS = 0 V; ID = 1.35 mA VDS = 10 V; ID = 1.35 mA VGS = 0 V; VDS = 50 V VGS = VGSth + 3.75 V; VDS = 10 V VGS = 10 V; VDS = 0 V VGS = VGSth + 3.75 V; ID = 4.5 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz
[1] [1] [1]
Min 104 1.4 19 -
Typ 21 210 100 33.5 1
Max 2.4 1.4 140 -
Unit V V A A nA m pF pF pF
ID is the drain current.
Table 7. RF characteristics Th = 25 C unless otherwise specified. Symbol VDS IDq PL(PEP) Gp D IMD3
BLF881_BLF881S_2
Parameter drain-source voltage quiescent drain current peak envelope power load power power gain drain efficiency third-order intermodulation distortion
Conditions
Min 20 45 -
Typ 50 0.5 140 21 49 -34
Max -30
Unit V A W dB % dBc
3 of 18
2-Tone, class AB
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 10 February 2010
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
Table 7. RF characteristics ...continued Th = 25 C unless otherwise specified. Symbol VDS IDq PL(AV) Gp D IMDshldr PAR
[1] [2]
Parameter drain-source voltage quiescent drain current average output power power gain drain efficiency intermodulation distortion shoulder peak-to-average ratio
Conditions
Min 20 30
[1] [2]
Typ 50 0.5 33 21 34 -33 8.3
Max -30 -
Unit V A W dB % dBc dB
DVB-T (8k OFDM)
-
Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
200 Coss (pF) 160
001aal074
120
80
40
0 0 20 40 60 VDS (V) 80
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
4 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 CW
001aal075
23 Gp (dB) 22 21 20 19 18 17 16 0
Gp
70 D (%) 60 50 40 30 20 10
D
40
80
120
0 160 200 PL (W)
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2.
CW power gain and drain efficiency as function of load power; typical values
7.1.2 2-Tone
0001aal076 001aal077
23 Gp (dB) 22 21 20 19 18 17 16 0
Gp
70 D (%) 60 50 40 30
0 IMD3 (dBc) -20
D
-40 20 10 0 120 160 PL(AV) (W) -60
40
80
0
40
80
120 160 PL(AV) (W)
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 3.
2-Tone power gain and drain efficiency as function of average load power; typical values
Fig 4.
2-Tone third order intermodulation distortion as a function of average load power; typical values
BLF881_BLF881S_2
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 10 February 2010
5 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7.1.3 DVB-T
001aal078 001aal079
23 Gp (dB) 22 21 20
Gp
70 D (%) 60 50 40
0 IMDshldr (dBc) -10
-20
D 19 18 17 16 0 30 60 PL(AV) (W) 90 30 20 -40 10
(2) (1)
-30
0
-50
0
30
60 PL(AV) (W)
90
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. (1) Lower adjacent channel (2) Upper adjacent channel
Fig 5.
DVB-T power gain and drain efficiency as function of average load power; typical values
Fig 6.
DVB-T shoulder distance as a function of average load power; typical values
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
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NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 DVB-T
001aal080 001aal081
9.0 PAR (dB) 8.0 PAR
50 D (%) 40
25 Gp (dB) 23
0 IMDshdr (dBc) -10
21
Gp
-20
D 7.0 30
19
IMDshdr
-30
17
-40
6.0 400
500
600
700
20 800 900 f (MHz)
15 400
500
600
700
-50 800 900 f (MHz)
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8.
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8.
Fig 7.
DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values
Fig 8.
DVB-T power gain and shoulder distance as function of frequency; typical values
7.3 Ruggedness in class-AB operation
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8.
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
7 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7.4 Reliability
106 Years 105
(1) (2) (3) (4) (5) (6) 001aal082
104
103
102
10
(7) (8) (9) (10) (11)
1 0 2 4 IDS(DC) (A) 6
TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) x 1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 9.
BLF881 electromigration
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
8 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
8. Test information
Table 8. List of components For test circuit, see Figure 10, Figure 11 and Figure 12. Component C1, C2 C3, C4 C5 C6 C7 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 5.1 pF 10 pF 6.8 pF 4.7 pF 2.7 pF 100 pF 10 F 470 F; 63 V 10 pF 8.2 pF 0.6 pF to 4.5 pF 6.8 pF 3.9 pF 100 10 k
[3] [3] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [3] [3] [1] [2] [1] [1] [1] [1]
Remarks
C8, C9, C10, C25, multilayer ceramic chip capacitor C26 C11, C27 C12 C20 C21 C22 C23 C24 L1 L2 L3 L4 L5 L6 L7 L20 L21 L22 L23 R1 R2
[1] [2] [3] [4]
multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline resistor resistor
TDK C570X7R1H106KT000N or capacitor of same quality.
Tekelec
(W x L) 7 mm x 15 mm (W x L) 2.4 mm x 9 mm (W x L) 2.4 mm x 10 mm (W x L) 2.4 mm x 25 mm (W x L) 2.4 mm x 10 mm (W x L) 2.0 mm x 20 mm (W x L) 2.0 mm x 21 mm (W x L) 7 mm x 12 mm (W x L) 2.4 mm x 13 mm (W x L) 2.4 mm x 31 mm (W x L) 2.4 mm x 5 mm
American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m.
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
9 of 18
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
Product data sheet Rev. 02 -- 10 February 2010
(c) NXP B.V. 2010. All rights reserved. BLF881_BLF881S_2
NXP Semiconductors
VGG
R2 C11 C27 C12
VDD
C26 C9
R1 L6
C20
C1
C3 C8
50
C25
L23 L22 L21 L20 L1 L2 L3 L4 L5
50
C24
C23
C22
C21
C2 L7
C4
C5
C6
C7
BLF881; BLF881S
C10 001aaj288
UHF power LDMOS transistor
10 of 18
See Table 8 for a list of components.
Fig 10. Class-AB common-source broadband amplifier
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
76.2 mm
40 mm
40 mm
001aaj289
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
11 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
R2
C11
C9 C12 C27 L6 C26
R1 C1 C20 C25 L23 L21 C24 C22 C21 C5 C2 C23 C4 L3 L5 C6 L23 C7 C8 L20 L1 L2 C3
L7
C10 L4
001aaj290
See Table 8 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
BLF881_BLF881S_2
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Product data sheet
Rev. 02 -- 10 February 2010
12 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
D
A F
3
D1
U1 q C
B c
1
E1 H U2 E
A
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51
0.184 0.220 0.006 0.155 0.210 0.004
0.364 0.365 0.356 0.355
0.235 0.065 0.225 0.055
0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225
OUTLINE VERSION SOT467C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-06 99-12-28
Fig 13. Package outline SOT467C
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Product data sheet
Rev. 02 -- 10 February 2010
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NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
Earless LDMOST ceramic package; 2 leads
SOT467B
D
A F 3 D1 D
U1 1
c
L
E1 H U2 E
2 b w2 A Q
0 Dimensions Unit(1) mm A b c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 E1 5.97 5.72 F H
5 scale L Q 2.21 1.96
10 mm
U1 9.78 9.53
U2 5.97
w2 0.25
max 4.67 5.59 nom min 3.94 5.33
1.65 18.29 2.92 1.40 17.27 2.16
5.72
max 0.184 0.22 0.006 0.364 0.365 0.233 0.235 0.065 0.72 0.115 0.087 0.385 0.235 0.01 inches nom min 0.155 0.21 0.004 0.356 0.355 0.227 0.225 0.055 0.68 0.085 0.077 0.375 0.225 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version SOT467B References IEC JEDEC JEITA European projection
sot467b_po
Issue date 08-12-09 09-10-27
Fig 14. Package outline SOT467B
BLF881_BLF881S_2 (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 10 February 2010
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NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
10. Abbreviations
Table 9. Acronym CW CCDF DVB DVB-T ESD HF IMD3 LDMOS LDMOST OFDM PAR PEP RF TTF UHF VSWR Abbreviations Description Continuous Wave Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial ElectroStatic Discharge High Frequency Third order InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Peak-to-Average power Ratio Peak Envelope Power Radio Frequency Time To Failure Ultra High Frequency Voltage Standing-Wave Ratio
11. Revision history
Table 10. Revision history Release date 20100210 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF881_BLF881S_1 Document ID BLF881_BLF881S_2 Modifications: BLF881_BLF881S_1
*
The status of this document has been changed to "Product data sheet".
20091210
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Product data sheet
Rev. 02 -- 10 February 2010
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NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the
(c) NXP B.V. 2010. All rights reserved.
12.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
BLF881_BLF881S_2
Product data sheet
Rev. 02 -- 10 February 2010
16 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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Product data sheet
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NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 5 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures . . . . . . . . . . . . . . . . . . . 7 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Ruggedness in class-AB operation . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2010 Document identifier: BLF881_BLF881S_2

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